| PART |
Description |
Maker |
| FGA272-638G FGA303-638G FGAX600-638G FGA304-638G F |
272 POS 1.27MM BGA ADAPTER BGA272, IC SOCKET
303 POS 1.27MM BGA ADAPTER BGA303, IC SOCKET
600 POS 1.27MM BGA EXTRACTION ADAPTER BGA600, IC SOCKET
304 POS 1.27MM BGA ADAPTER BGA304, IC SOCKET
168 POS 1.27MM BGA EXTRACTION ADAPTER BGA168, IC SOCKET
304 POS 1.27MM BGA EXTRACTION ADAPTER
255 POS 1.27MM BGA EXTRACTION ADAPTER
357 POS 1.27MM BGA ADAPTER
560 POS 1.27MM BGA ADAPTER
|
Advanced Interconnections, Corp.
ADVANCED INTERCONNECTIONS CORP
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| PUMA2F16006M-90 PUMA2F16006-90 PUMA2F16006M-120E P |
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, TSSOP
BGA, ROHS-A, IND TEMP, T&R(ARM)
BGA,GREEN,IND TEMP,T&R(ARM)
x32 Flash EEPROM Module X32号，闪存EEPROM模块
EEPROM EEPROM
|
Infineon Technologies AG
Amphenol Tuchel
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS71V08F64GS08-7085AI IS71V08F64GS08-7085BI |
SPECIALTY MEMORY CIRCUIT, PBGA101 11 X 12 MM, BGA-101
SPECIALTY MEMORY CIRCUIT, PBGA73 8 X 11.60 MM, BGA-73
|
Integrated Silicon Solution, Inc.
|
| FDZ206P |
P-Channel 2.5V Specified PowerTrench BGA MOSFET
From old datasheet system
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
|
Fairchild Semiconductor
|
| K7P401811M-HC160 K7P403611M-HC200 K7P403611M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
128K X 36 STANDARD SRAM, 2.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| GDPXA255A0C400 GDPXA255A0E200 GDPXA255A0C200 GDPXA |
32-BIT, 400 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 200 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 300 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
|
Intel, Corp.
INTEL CORP
|
| FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| IBM25PPC750FX-GB0132T IBM25PPC750FX-EB1032T IBM25P |
32-BIT, 600 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 733 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
32-BIT, 700 MHz, RISC PROCESSOR, CBGA292 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292
|
Fox Electronics
|
| IS61NVP51236-250B2I IS61NVP102418-250B2I IS61NVP10 |
512K X 36 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 2.6 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
1M X 18 ZBT SRAM, 3.1 ns, PBGA119 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-119
|
Integrated Silicon Solution, Inc.
|
|
